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| T10B series SibodTM FEATURES G Glass passivated junction G High current diverting capability 250A G Low capacitance, less than 200pF G UL recognized G Automatic reset G Does not degrade O1.0160.050 APPLICATION G Bi-directional device for telephone and line card protection 25.4 min +0.127 O5.080 -0.254 +0.127 9.400 -0.254 ELECTRICAL CHARACTERISTICS (Tamb = +25C) SYMBOL VRM VBR IH VR PARAMETER Stand-off Voltage Breakdown Voltage Holding Current Continuous Reverse Voltage ABSOLUTE RATINGS (limiting values) (Tj = + 25C) L = 10mm SYMBOL P PARAMETER Power dissipation on infinite heatsink Peak Pulse Current Tamb = 50C 10x1000sec 10/700 1.5KV 8-20 us expo tp = 20 ms Non repetitive VALUE 5 100 125 250 50 100 -40 to 150 150 230 UNIT W A 25.4 min Ipp Itsm di/dt T stg Tj TI Non-repetitive surge peak on-state current Critical rate of rise of on-state current Storage and operating junction Temperature range Maximum lead temperature for soldering during 10s at 4mm from case A A/us C C C All dimensions in mm THERMAL RESISTANCES SYMBOL Rth(j-i) Rth(j-a) PARAMETER Junction-leads on infinite heatsink Junction-ambient on printed circuit L = 10mm VALUE 20 75 UNIT C/W C/W All parameters are tested using Fet Test TM Model 3600 DEVICE TYPE T10B035 T10B065 T10B120 T10B140 T10B200 T10B230 T10B270 2 2 2 2 2 2 2 IRM @ VRM max IR @ VR max VBO @ IBO max V 35 65 120 140 200 230 270 V 55 80 160 200 265 300 350 mA 800 800 800 800 800 800 800 IH min mA 150 150 150 150 150 150 150 C typ pF 180 160 140 140 130 120 120 ORDERING INFORMATION T10B Voltage Holding Current Option Packaging Option B = Bulk (500 pcs) T = Tape and reeled (1500 pcs) A V 32 55 110 120 170 200 230 A 50 50 50 50 50 50 50 w w w. l i t t e l f u s e . c o m 55 |
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